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Journal
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2012 |
The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169 |
1 |
원문
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Journal
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519, no.18, pp.6174-6177 |
0 |
원문
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Journal
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2010 |
Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801 |
6 |
원문
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Journal
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2008 |
20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3 |
11 |
원문
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Conference
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2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
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