Subjects :
electron trapping
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Journal
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2018 |
Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric
Maruf A. Bhuiyan IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52 |
26 |
원문
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Conference
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2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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Journal
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2014 |
Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133 |
21 |
원문
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Journal
|
2010 |
Bipolar Resistive Switching Characteristics of Poly(3,4-Ethylene-Dioxythiophene): Poly(Styrenesulfonate) Thin Film
Hu Young Jeong Current Applied Physics, v.10, no.1, pp.46-49 |
33 |
원문
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Conference
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2006 |
The Abnormal Degradation Behavior of ZnO TFT Under Gate Bias Stress
Hwang Chi-Sun The Electrochemical Society (ECS) Meeting 2006, pp.301-305 |
2 |
원문
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특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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