산화갈륨, 전력 반도체, 쇼트키 다이오드, 항복 전압, 누설 전류, 표준 소자, 금속 산화물 전계 효과 트랜지스터, MOSFET, , 전력 반도체, 쇼트키 다이오드, 항복 전압, 누설 전류, 표준 소자, 금속 산화물 전계 효과 트랜지스터, MOSFET, SBD
KSP Keywords
Power semiconductor, high efficiency, power semiconductor devices, semiconductor device
Funding Org.
과학기술정보통신부
Research Org.
한국전자통신연구원
Project Code
20JB2400, Several kV high efficiency ultra small power semiconductor core material technology,
Mun Jae Kyoung
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