쇼트키 다이오드, 금속 산화물 전계효과 트랜지스터, 항복 전압, 누설 전류, 표준소자, Schottky barrier diode, SBD, MOSFET, breakdown voltage, leakage current, Standard device
Funding Org.
과학기술정보통신부
Research Org.
한국전자통신연구원
Project Code
21JB3400, Several kV high efficiency ultra small power semiconductor core material technology,
Mun Jae Kyoung
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