산화갈륨, 쇼트키 다이오드, 금속산화물 전계효과 트랜지스터, 항복 전압, 온-저항, 누설 전류, 표준 소자, Ga2O3, Schottky Barrier Diode (SBD), MOSFET, Breakdown Voltage, On-Resistance, Leakage Current, Standard Device
KSP Keywords
Core material, Material technology, Power semiconductor, Small power, high efficiency
Funding Org.
과학기술정보통신부
Research Org.
한국전자통신연구원
Project Code
23JH1300, Several kV high efficiency ultra small power semiconductor core material technology,
Mun Jae Kyoung
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