ETRI-Knowledge Sharing Plaform

Gan-Based Head Size High Electron Mobility Transistor(HEMT) Threshold Voltage Shift Rf Performance T-Gate Proton Irradiation Gate Insulator Algan/Gan Hemts Radiation Tolerance Device Performance Rf Applications Gate Capacitance Maximum Oscillation Frequency Carrier Mobility Displacement Damage X-Band Applications Metal-Insulator-Semiconductor(MIS) Equivalent Circuit Model(ECM) 5 Nm Drain Current Cutoff Frequency Sapphire Substrates Stress Measurement Critical Defects Device Degradation Degradation Mechanism Design And Fabrication Electrical Properties(I-V curve) Gan Films Linear Energy Transfer Satellite Communication System Size Dependence Performance Improvement Vt Shift Time Exponent Radiation Resistance Gate Bias Stress High Performance Proton Radiation Property Improvement Off-State Total Ionizing Dose T-Shaped Gate Rf Properties Device Processing Dc Characteristics Energy Barrier Passivation Layer Trap Sites And Gate Energy Levels Hydrogen Silsesquioxane Mobility Degradation Systematic Study Recess Gate Device Characteristics Gate Voltage Interface Trap Performance Degradation 60 Ghz Ac Stress Device Characterization Sheet Resistance Access Region Thin Film Resistor Thermal Conductivity Temperature Dependence Shift Mechanism Cu Film Electrical Characteristics Gate Resistance Hetero-Interface Laser Lift-Off Signal Modeling Substrate Effects Actual Operation Aln Substrate Electrical Devices Frequency Properties Hexagonal Boron Nitride(h-BN) Radiation Energy Self-Heating Effect(SHE) Various Substrates