Subjects :
interface states
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Conference
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2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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Journal
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2014 |
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
V Rajagopal Reddy Semiconductor Science and Technology, v.29, no.7, pp.1-6 |
29 |
원문
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Journal
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2008 |
High-gain and Low-hysteresis Properties of Organic Inverters with an UV-photo Patternable Gate Dielectrics
Lim Sangchul Thin Solid Films, v.516, no.12, pp.4330-4333 |
5 |
원문
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Journal
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2007 |
Thermal Annealing Effects on the Electrical Characteristics of the Back Interface in Nano-silicon-on-insulator Channel
조원주 Applied Physics Letters, v.90, no.14, pp.1-3 |
9 |
원문
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Journal
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2007 |
Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
Jun Myung Sim Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85 |
5 |
원문
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Conference
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2006 |
New Analysis on the Interface Trap States at Schottky Contact
Jun Myung Sim International Conference on the Physics of Semiconductors (ICPS) 2006, pp.1-2 |
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Journal
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2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137 |
8 |
원문
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특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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