Subject

Subjects : Critical temperature

  • Articles (7)
  • Patents (1)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2024 Effect of the Post-Annealing Temperature on the Interfacial Reaction Between a High Tc Superconductor and Topological Insulator   Lee Woo Jung  Advanced Electronic Materials, v.10, no.7, pp.1-9 4 원문
Conference 2019 Ultralow Power Wireless-Fire-Alarm-System using a VO2-Based Metal-Insulator-Transition Device   Jimin Son  International Conference on Sensing, Communication, and Networking (SECON) 2019, pp.1-2 1 원문
Journal 2010 Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs   Choi Sungyoul  Journal of the Korean Physical Society, v.57, no.61, pp.1769-1772 0 원문
Journal 2009 Control of Current-Jump Induced by Voltage, Temperature, Light in P-Type GaAs: Programmable Critical Temperature Sensor   Choi Sungyoul  Applied Physics Letters, v.95, no.23, pp.1-4 4 원문
Journal 2009 Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (10 10)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes   Sun Jin Yun  Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 9 원문
Journal 2007 Microstructure of Screen-printed (Tl0.5,Pb0.5)(Sr0.8,Ba0.2)2Ca2Cu3Oy Superconducting Films on Untextured Silver Substrate   Kim Bongjun  Physica C : Superconductivity, v.460-462, pp.736-737 2 원문
Journal 2006 Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor   Kim Bong Jun  Applied Physics Letters, v.90, no.2, pp.1-4 229 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2010 CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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