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Journal
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2023 |
A 275-GHz InP HBT H-Band Amplifier with Transmission Line-Based Capacitively Coupled Resonator Matching Technique
최찬규 IEEE Transactions on Terahertz Science and Technology, v.13, no.6, pp.659-670 |
5 |
원문
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Journal
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2018 |
Trends in Terahertz Semiconductor based on Electron Devices
Kang Dongwoo 전자통신동향분석, v.33, no.6, pp.34-40 |
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원문
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Conference
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2016 |
100 Gb/s photoreceiver module based on 4ch × 25 Gb/s vertical-illumination-type Ge-on-Si photodetectors and amplifier circuits
Jiho Joo Silicon Photonics XI (SPIE 9752), v.9752, pp.1-7 |
1 |
원문
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Journal
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2007 |
A Flip-Chip-Packaged InP HBT Transimpedance Amplifier for 40-Gb/s Optical Link Applications
Ju Chull Won Journal of the Korean Physical Society, v.50, no.3, pp.862-865 |
2 |
원문
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Journal
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2007 |
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
Jongmin Lee Journal of the Korean Physical Society, v.50, no.3, pp.871-874 |
2 |
원문
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Conference
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2006 |
A Flip Chip Packaged InP HBT Transimpedance Amplifier for 40 Gb/s Optical Link Application
Ju Chull Won International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1 |
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|
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Conference
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2006 |
Packaged Broadband Amplifier for 40 Gb/s Optical Transmission Systems in InP HBT Technology
Jongmin Lee International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.161-161 |
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Conference
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2006 |
Design and Fabrication of Wideband Limiting Amplifier by using InGaAs/InP HBT Technology
Jongmin Lee 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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