Subjects :
Barrier lowering
논문 검색결과
| Type |
Year |
Title |
Cited |
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Conference
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2024 |
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444 |
0 |
원문
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Journal
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2024 |
Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography
Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023 |
2 |
원문
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Journal
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2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 |
1 |
원문
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|
Journal
|
2007 |
Selective oxidation fin channel MOSFETs with low source/drain series resistance
Cho Young Kyun Electronics Letters, v.43, no.13, pp.734-735 |
0 |
원문
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Journal
|
2006 |
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156, no.7-8, pp.533-536 |
25 |
원문
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|
Journal
|
2005 |
30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance
Chang-Geun Ahn IEEE Electron Device Letters, v.26, no.7, pp.486-488 |
16 |
원문
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특허 검색결과
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Family Pat. |
KIPRIS |
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연구보고서 검색결과
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