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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Journal
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2020 |
A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126 |
4 |
원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Journal
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2015 |
Preparation and Characterization of a Triple Layered Au-PMMA-PbSe Hybrid Nanocomposite: Manipulation of PMMA Spacer Layer by Oxygen Plasma Etching
Kim Wan Joong Bulletin of the Korean Chemical Society, v.36, no.8, pp.1966-1973 |
2 |
원문
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Journal
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2012 |
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl 2/Ar Inductively Coupled Plasma
김대희 Japanese Journal of Applied Physics, v.51, no.10, pp.1-5 |
3 |
원문
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Journal
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2012 |
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
장한별 Plasma Chemistry and Plasma Processing, v.32, no.2, pp.333-342 |
3 |
원문
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Journal
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2010 |
Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma
함용현 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-5 |
5 |
원문
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