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Journal
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2014 |
The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process
Woo Jong Chang Transactions on Electrical and Electronic Materials, v.15, no.1, pp.49-54 |
1 |
원문
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Journal
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2010 |
Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas
김문근 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-6 |
5 |
원문
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Journal
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2008 |
Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2/X (X=Ar, He, N2) Inductively Coupled Plasmas
Alexander Efremov Journal of the Electrochemical Society, v.155, no.12, pp.D777-D782 |
72 |
원문
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Journal
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2008 |
Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
김만수 ETRI Journal, v.30, no.3, pp.383-393 |
10 |
원문
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Journal
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2008 |
Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3∕He inductively coupled plasma
김만수 Journal of Vacuum Science and Technology A, v.26, no.3, pp.344-351 |
14 |
원문
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Journal
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2006 |
Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask
Yoon Sung Min Japanese Journal of Applied Physics, v.45, no.40, pp.1080-1083 |
21 |
원문
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Journal
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2005 |
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Yoon Sung Min Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 |
36 |
원문
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