Subjects :
Equivalent oxide thickness
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2010 |
Effects of N2 and NH3 Remote Plasma Nitridation on the Structural and Electrical Characteristics of the HfO2 Gate Dielectrics
Park Kun Sik Applied Surface Science, v.257, no.4, pp.1347-1350 |
37 |
원문
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Journal
|
2010 |
In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
최철종 Materials Transactions, v.51, no.4, pp.793-798 |
3 |
원문
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|
Journal
|
2009 |
Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film
최철종 Microelectronics Reliability, v.49, no.4, pp.463-465 |
2 |
원문
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|
Journal
|
2007 |
Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics
Choi Chel-Jong Electrochemical and Solid-State Letters, v.11, no.2, pp.H22-H25 |
0 |
원문
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|
Journal
|
2007 |
Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Japanese Journal of Applied Physics, v.46, no.1, pp.125-127 |
8 |
원문
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|
Journal
|
2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230 |
1 |
원문
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특허 검색결과
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연구보고서 검색결과
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