Subjects :
Erbium silicide
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519, no.18, pp.6174-6177 |
0 |
원문
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Journal
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2009 |
Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
신진욱 Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
0 |
원문
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Journal
|
2009 |
Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain
Yang Jong-Heon Thin Solid Films, v.517, no.5, pp.1825-1828 |
5 |
원문
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|
Journal
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2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 |
8 |
원문
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Journal
|
2007 |
Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
Jun Myung Sim Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85 |
5 |
원문
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|
Journal
|
2006 |
N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 |
28 |
원문
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특허 검색결과
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연구보고서 검색결과
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