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Journal
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2022 |
Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
Seungyoung Lim Micromachines, v.13, no.8, pp.1-10 |
2 |
원문
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Journal
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2021 |
Ultrafast Photoexcited-Carrier Behavior Induced by Hydrogen Ion Irradiation of a Cu(In,Ga)Se2 Thin Film in the Terahertz Region
Lee Woo Jung IEEE Transactions on Terahertz Science and Technology, v.11, no.2, pp.175-182 |
6 |
원문
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|
Journal
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2021 |
Ultrafast Photoexcited-Carrier Behavior Induced by Hydrogen Ion Irradiation of a Cu(In,Ga)Se2 Thin Film in the Terahertz Region
이규석 IEEE Transactions on Terahertz Science and Technology, v.11, no.2, pp.175-182 |
6 |
원문
|
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Journal
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2021 |
A Systematic Study of the Interactions in the Top Electrode/Capping Layer/Thin Film Encapsulation of Transparent OLEDs
Kwon Byoung-Hwa Journal of Industrial and Engineering Chemistry, v.93, pp.237-244 |
13 |
원문
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Journal
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2014 |
Junction formation at the interface of CdS/CuInxGa(1-x)Se2
박순미 Journal of Physics D : Applied Physics, v.47, no.34, pp.1-8 |
22 |
원문
|
|
Journal
|
2012 |
Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition
손아름 Applied Physics Letters, v.101, no.19, pp.1-3 |
35 |
원문
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Journal
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2010 |
P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain
Choi Sungjin IEEE Transactions on Electron Devices, v.57, no.8, pp.1737-1742 |
4 |
원문
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Journal
|
2009 |
Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
최성진 IEEE Electron Device Letters, v.30, no.1, pp.78-81 |
20 |
원문
|
|
Conference
|
2008 |
High Speed Flash Memory and 1T-DRAM on Dopant Segregated Schottky Barrier (DSSB) FinFET SONOS Device for Multi-functional SoC Applications
최성진 International Electron Devices Meeting (IEDM) 2008, pp.1-4 |
17 |
원문
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Journal
|
2002 |
Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors
최경진 Japanese Journal of Applied Physics, v.41, no.5A, pp.2894-2899 |
7 |
원문
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