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Journal
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2026 |
New insights into I-line stepper based InGaAs/InP double-heterojunction bipolar transistors (DHBTs)
Kang Soo Cheol Materials Science in Semiconductor Processing, v.201, pp.1-7 |
0 |
원문
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Journal
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2026 |
New insights into I-line stepper based InGaAs/InP double-heterojunction bipolar transistors (DHBTs)
Jinchul Cho Materials Science in Semiconductor Processing, v.201, pp.1-7 |
0 |
원문
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Journal
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2025 |
Demonstration of GaN-Based HEMTs Using Extremely Thin h-BN Passivation Layer and Air Spacer for the RF Performance Improvement
Sungjae Chang Advanced Electronic Materials, v.권호미정, pp.1-10 |
0 |
원문
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Journal
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
9 |
원문
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Journal
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2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
29 |
원문
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Journal
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2006 |
Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Kim Yong Won Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206 |
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Journal
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2006 |
Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
Lee Seung-Yun Solid-State Electronics, v.50, no.3, pp.333-339 |
4 |
원문
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Journal
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2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 |
15 |
원문
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Journal
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2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 |
15 |
원문
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