15ZB1600, Development of SiC based trench type next generation power device,
Kim Sang Gi
Abstract
<연구목표> - SiC MOSFET 핵심공정 개발, 소자 설계 및 SiC Diode 제작
<연구내용> - SiC 투명기판 미세패턴 형성기술 개발 - SiC 기판 Trench 식각 공정 및 Trench 게이트 형성 기술개발 - 불순물 Doping 및 PN 접합 형성 공정기술 개발 - 열산화막 성장 및 게이트절연막 공정기술 개발 - Ohmic 접촉 형성 기술 개발 - SiC 전력소자의 TCAD 시뮬레이션 구축, 시뮬레이션을 통한 SiC 다이오드 및 MOSFET 소자 설계 - 1700V급 SiC 전력소자용 가드링 설계 - SiC Diode 제작 및 특성 평가 (BV >1000V, IF >10A) - SiC 전력소자의 ESD 보호회로 기술 개발
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