17ZB1500, Developement of key material and device technologies for next generation semiconductor devices with extreme performance,
Leem Young Ahn
Abstract
Ⅳ. 연구결과 펄스 레이저다이오드 개발 - 광밴드폭 확장을 위한 회절격자 최적화 - 4nm 광밴드폭 구현 (25GHz 모드 간격, 20개 모드) - 높은 k 구현을 위한 상부 회절격자 사용의 필요성 확인
좁은 선폭을 가지는 광원개발 - 좁은 선폭 구현을 위한 회절격자, 활성층 구조 설계 - SNR 60dB 이상의 DFB 구현
광빗살발생기 구현 및 집적구도 연구 - MLLD의 밴드폭 확장을 위한 위상변조기를 MLLD 주파수의 정수배 구동 전산모사 - 안정적인 광빗살 구현 및 집적구도를 위한 패키징
GaN-Diamond Template 기술 연구 - Nano-diamond의laser patterning을 통해 350m급 GaN-Diamond Template 구현시 thermal stress 최소화 - SiC interalyer를 CVD 성장하여, Diamond의 박리현상 제거 - 증착된 Diamond에서 10.5W/cmK 최대열전도도 확보
GaN-Diamond 소자 기술 연구 - GaN-Diamond SBD 소자 제작 및 TO-220 패키징 진행 - GaN-Diamond SBD에서 3.58V에서 10A 전류용량 확인 - 적외선 카메라를 통한 방열특성 조사 진행
고성능 p형 산화물반도체 TFT - 용액 공정법기반의 KTO 산화물소재로 박막트랜지스터 제작 및 세계최고의 전계이동도 7.7cm2/Vs 확인
전산모사기반 p형 산화물반도체 소재조성 검색 - 고성능 p형 산화물반도체 소재 후보군 선별을 위한 신규 선별자 FEH(Formation Energy of Hydrogen) 발견 - 제일 원리 대량 물질 선별법 코드를 개발하여 CuLiO, La2O2Te등 신규 p형 산화물반도체 후보군 선별
( 출처: 요약문 9p )
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