산화갈륨, 쇼트키 다이오드, 금속산화물 전계효과 트랜지스터, 항복 전압, 온-저항, 누설 전류, 표준 소자, Ga2O3, Schottky Barrier Diode (SBD), MOSFET, Breakdown Voltage, On-Resistance, Leakage Current, Standard Device
Funding Org.
과학기술정보통신부
Research Org.
한국전자통신연구원
Project Code
22JB1800, Several kV high efficiency ultra small power semiconductor core material technology,
Mun Jae Kyoung
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