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Silicon Quantum Dots Silicon Nanocrystals(Si NCs) Cancer Marker Human Serum Prostate-Specific Antigen(PSA) Ionic Strength Phase Change Material(PCM) Si Substrate Specific Binding Electrochromic Materials Si Qds Erbium Silicide Monoclonal Antibody(MAb) In-Situ Spatial Light Modulator(SLM) Organic Light-Emitting Diodes(OLEDS) Optical And Electrical Properties Equivalent Oxide Thickness Top-Down Antigen-Antibody Binding Reverse Offset Printing Light-Emitting Diodes (Leds) Detection Method Buffer Solution Ag Film Label-Free Zeta Potential(Surface charge) Si Nanochannel Point-Of-Care Testing Low Temperature(LT) Light Emitter Barrier Metal Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Si Nanocrystal Deposition Process Au Nanoparticles(Au-NPs) Coloration Efficiency Highly Efficient Light Extraction Efficiency Silicon Photonics Counter Electrode Silicon Carbide Film External Quantum Efficiency Si Channel Si Surface Schottky Diode Dynamic Range Current Density High Reflectance Short Channel Working Electrode Debye Screening Length Quantum Confinement Effects Dielectric Layer Si Quantum Dot Channel Length Detection Techniques Electrically Driven Reflective Display Gate Voltage Oxide-Semiconductor Field-Effect Transistors Polymer Electrolytes Plasmonic Structures Extended Gate New Method Visible Range Color-Selective Whole Blood Environmentally Friendly Disease Diagnosis Field Effect Transistor Biosensor Optical Transmittance Surface-Immobilized Proteins Electronic Detection Ph-Dependence Photosensitive Biosensor Reverse Bias Current Drivability Sic Film Optical Performance Light Output Power(Lop) Partially Reflective Gate Capacitance Capacitance-Voltage Silicon On Insulator(SOI) Mass Production Patterned Array Ito Contact Detection Scheme Flow-Through Nitrogen Source Electrical Characteristics High Reliability No Dissociation Visible Light Emission Graphene Electrode Interface Trap States Tungsten Electrode On-Chip Integration Cu Ions Ph Sensitivity Gas Mixture Large Area High-K Dielectric Drain Voltage New Device Surface Pattern Binding Reaction Mos Capacitor Rapid Thermal Annealing(RTA) Si Led Biosensor Array Device Structure Interfacial Reaction Electrical And Structural Properties Pulse Laser Deposition Top-Gate Current-Voltage Quantitative Detection Color Gamut High-K Metal-Gate Salt Concentration Silicon Nitride Film Surface Immobilization Saturation Current Flexible Electrochromic Devices Phosphate Buffer Device Physics Human Fluids Digital Holography Photodiode Array High-Resolution Transmission Electron Microscopy Forward Voltage Quantum-Dot Light-Emitting Diodes(QLEDs) 5 Nm Surface-Modified Black Color Gate Dielectric Applied Physics Cavity Structure Drug Discovery Real-Time Analysis Subthreshold Swing(SS) Direct Monitoring Fabrication Process High Current Printing Technology 3d Image On/Off Current Ratio Si Field-Effect Transistor Debye Length Operating Voltage Electrical Detection Electrolyte Concentration Multiplexed Sensing Schottky Barrier Height Modulation Characteristic Film-Type Atomic Composition Ag Thin Film Peak Position Device Failure Focused Analysis Electrochromic Switching Gate Electrode Tio2 Nanoparticles Transport Characteristics Low Pressure Chemical Vapor Deposition Vehicle Guidance System Phase-Only Specific Surface 38 Ghz Silicate Film High Reflectivity Graphene Anode Light Transmittance Electrochemical Reaction(ECR) Static Current Quantum Dot Formation Modified Au Electronic Transport Molecule Detection Tunneling Barrier Design And Fabrication Pedot:Pss Layer Metallic Grating Space Cooling Contact Resistance(73.40.Cg) Charging Current Channel Structure Low Leakage Current Components Technology Sputtering Deposition Silver Electrode P-N Junction Technical Barrier Petri Net(PN) Si Nanowires Dynamic Behaviour Automatic Vehicle Low Detection Limit Insulator Layer Biosensor Platform Flash Memory Active Metasurface Cell Gap Negative Electrodes Controllable Light Array Biosensor Semi-Transparent Reverse Leakage Current Physical Plasma Low Concentration Transparent Flexible Electrode Light-Emitting Diode (Led) Liquid Crystal Device Ph Level Magnesium Fluoride P-Type Silicon Ag Deposition Floating Gate Memory Low Threshold Voltage Image Generation Double Layered Carbon Dioxide Plasma-Enhanced Chemical Vapor Deposition(PECVD) Honeycomb Structure Zinc Tin Oxide Nanowire Field-Effect Transistors Forward Current Chemical Bonding Nonvolatile Memory Devices Pulsed-Laser Deposition(PLD) Reflection Structure High Performance Polyvinyl Acetal Transfer Method National Television Reflection-Type Initialization Vector(IV) Insulator Material Cyclic Operation Parasitic Resistance Schottky Junction Counter-Ions Silicon Nanoclusters Plasma Treatment Smart Window Metal Source/Drain(S/D) Passive Type High-Pressure Hydrogen Emission Image Ag Layer Gate Leakage Current Failure Mode Charge Movement Large Viewing Angle Ultrathin Layer Low Cost Application Film Thickness Cooling And Heating Linear Increase Cost-Effective Amplitude And Phase Information Amorphous Phase Conventional Devices On/Off Ratio Room-Temperature Antimony-Doped Turn-On Voltage Light-Emitting Diode Array Rf Properties Redox Reaction Diffraction Grating Surface Reaction Optimum Condition Power Ratio Interface Dipole Active Area SB-MOSFET Electron Mobility Anti-Reflection Thickness Variation National Defense New Approach Gel Electrolyte Hydrogen Ion Flexible Display Oxide Material Post-Annealing Process Surface Plasmon(SP) Optical Addressing Smart Lighting Interface States Poly(Methyl Methacrylate)(PMMA) Reduction Potential Spatial Light Modulation Surface Morphological Memory Window Oxidized State Ion Sensitive Field Effect Transistor Alloy Thin Film Ito Thin Film Ph Response Array Chip High-Density Conduction Mechanism Capacitance Value Wavelength-Selective Dielectric Thickness Operating Characteristics Three-Layered Morphological Properties Low Power Consumption Electrical Efficiency Electrochromic Performance Ultra-Thin Body(UTB) Fabry-Perot Resonance Nucleation Sites Band Structure Continuous Current High Switching Speed Force Microscopy Silicon-Based Successful Implementation Plasmon Resonance Switching Function Switchable Mirror Molecular Charge Active Region Cut-Off Frequency Different Thicknesses Graphene Layer Flow Rate Oxidation State Input Signal Metal Layer High Transmittance Oxygen Pressure Band Gap SOI MOSFET Red Cells Cmos Technology Ph-Dependency Radiant Heat Cubic Phase Hybrid Structure Negative Charge Platform Development Thermal Treatments Interface Quality State Maintenance High Efficiency Optical Contrast Channel Doping In-Diffusion Bio-Molecule Energy Consumption Volume Ratio Growth Mechanism High-Sensitivity Sensor Reversible Deposition Gate Stack Output Characteristics Encapsulation Layer Fast Response Time Display System 4-Ethylenedioxythiophene):Poly(4-Styrenesulfonate)(PEDOT:PSS) Ion Diffusion And Reflection Amplitude-Only Electrical And Optical Properties Gate Bias Relative Dielectric Constant High Temperature Size Scale Crystallization Temperature Regioregular Poly(3-Hexylthiophene)(RR-P3HT) Schottky Contacts Interfacial Layer Second Step Near-Infrared(NIR) Nano Cmos Molecular Nitrogen Tin-Doped Indium Oxide Sin X Positive And Negative Light Control Spatial Configuration Ac Admittance Thermionic Emission Model Protective Layer Electroluminescence Spectra Surface Modification Current Spreading Layer(CSL) Plastic Substrate Transparent Conductor Power Efficiency Sb-Doped Electrode Pattern Scaling Down Good Stability Visible Spectrum Range Light Sources Multi-Layered Graphene Building Space Charging Dynamics Chemical Vapor Deposition Method Laser Interference Indium Tin Oxide Thin Films Reflection Characteristics Blur Problem Information Display Light Penetration Silicon Substrate Different Ph Antigen Detection Thermal Annealing Temperature Gst Thin Films Reflected Light Reference Electrode Ion Sensor Flat Panel Display(FPD) Stack Structure Diffractive Optical Elements Pt-Er Alloy Gate Length Comparative Study Surface Analysis Device Integration Nickel Silicide Active Layer Period Ratio Compound Semiconductor Tin Oxide Nanowires Fast Switching Bonding Technology Oxide Layer Temperature-Independent High Mobility Sheet Resistance Color Filters Excimer Laser Plasma Damage Probe Molecules Top Layer Atomic Force Microscope(AFM) Mechanical And Thermal Properties Display Applications Driving Electrode Dark States Basic Research Electrical And Optical Characteristics Psa Detection Improved Thermal Stability Visible Region Electrolyte-Insulator-Semiconductor(EIS) Light-Emitting Transistors Diffusion Of Ions Heat Generation Bulk Silicon Low Electrical Resistivity Television System Barrier Width Display Technology Active Matrix Electricity Consumption Dynamic Behaviors Large Numbers High Transparency Phase Modulation High Diffraction Efficiency Hole Tunneling Two-Step Annealing Process Scattering Particles Novel Device Charge Retention Digital Hologram Device Reliability Nc-Si Printed Electrodes Film Growth Channel Width Scale-Up Nh3 Plasma Gate Insulator Temperature Characteristics Metal Work Function Film Deposit Transparent Electrode Low Voltage Ni Silicide Formation High Contrast Ratio Optoelectronic Devices It Infrastructure 1 H Vacuum Deposition Organic Thin-Film Transistors (Otfts) Zno Nanowire Design Method Case Studies Interference Effects Amorphous Silicon Carbide Module Development Transparent Display Control Device Layered Nanostructure Pcm Layer Oxide Charge Layer Thickness Resonant Cavity Fabry-Perot Cavity Rta Process High Speed Equivalent Circuit Modeling Electrical Output Constant Ph Electron Transfer Quantitative Estimation Optical Modulation Light Transmission Nanostructured Electrodes Image Blurring Zinc Oxynitride(ZnON) Applied Bias Voltage Driving Mechanism Low Resistance Electrode Driven Device Laser Lithography Pre-Reduction Gas Source Polycrystalline Silicon(poly-Si) Schottky Barrier Diode(SBD) Ph-Dependent Subwavelength Resolution Optical Devices Crystallization Behavior Led Array Driving Tests Flatband Voltage Shift Diffusion Depth Applied Voltage Highly Transparent Interface Trap Density Single Electrode Doping Concentration Pattern Size Performance Optimization Electron Diffraction Pattern Phase Structure Improved Performance Color-Switchable