ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Schottky Barrier Diode(SBD) Gan Heterostructures Normally-Off Low-Rate Dry Etching Recess Depth Etching Conditions Thermal Properties 5 Nm Gan-Based Leakage Current Silicon Substrate Thermal Behavior Algan/Gan-On-Si Sapphire Substrates Semiconductor Device Cvd Diamond C-Plane Sapphire Substrate 40 Nm Ohmic Contact Resistance Power Density Turn-On Threshold Voltage Etch-Stop Gan Surface Rapid Thermal Annealing(RTA) Annealing Temperature Different Temperatures Forward Current Fine Control Recessed Gate Etching Rate Gan Power Device Gan Nanowire High Temperature Characterization 900 V Power Semiconductor Surface Morphology Thickness Variation Trade-Off High-Power Applications High Voltage Applications Inductively-Coupled Plasma(ICP) Annealing Process Off-State Leakage Recent Progress Diamond Substrate Forward And Reverse Low Damage Rf Power Sensor Device Metal Layer Metal Stacking Temperature Profile High Efficiency Gan-On-Diamond Gan Device Gas Sensors 20 Nm Pfc Converter Power Transistor Etch Rates Various Conditions Chemical Vapor Deposition Diamond Heat Spreader High Power Conversion Efficiency Composite Metal Multi-Layer Metal Electrical Characteristics Efficiency And Power Gate Recess Current Collapse Structural Changes Specific Contact Resistance Stop Layer Channel Width Breakdown Voltage(BDV) Blocking Voltage Enhancement-Mode Multi-Step On-Current Smooth Morphology Low Turn-On Voltage