ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Gan Heterostructures Schottky Barrier Diode(SBD) Normally-Off Low-Rate Dry Etching Etching Conditions Recess Depth Sapphire Substrates Semiconductor Device Thermal Behavior Gan-Based Leakage Current Silicon Substrate High Power Applications Algan/Gan-On-Si Thermal Properties Cvd Diamond 5 Nm C-Plane Sapphire Substrate Turn-On Threshold Voltage 40 Nm Etch-Stop Gan Surface Ohmic Contact Resistance Power Density Rapid Thermal Annealing(RTA) Annealing Temperature Different Temperatures Fine Control Forward Current Pin Diode Recessed Gate Trade-Off Thickness Variation Annealing Process 900 V Gan Nanowire Etching Rate Gan Power Device High Temperature Characterization High Breakdown Voltage High Voltage Applications Inductively-Coupled Plasma(ICP) Off-State Leakage Power Semiconductor Recent Progress Surface Morphology Temperature Profile Diamond Substrate Forward And Reverse Low Specific On-Resistance Low Damage Metal Layer Metal Stacking Rf Power Sensor Device Gas Sensors Etch Rates Gan-On-Diamond Gan Device High Efficiency Low Contact Resistance 20 Nm Pfc Converter Power Transistor Composite Metal Diamond Heat Spreader Various Conditions Multi-Layer Metal High Power Conversion Efficiency Chemical Vapor Deposition Channel Width Current Collapse Efficiency And Power Electrical Characteristics Gate Recess Specific Contact Resistance Structural Changes Stop Layer Blocking Voltage Enhancement-Mode Low Turn-On Voltage Multi-Step On-Current P-Type Gan Smooth Morphology