ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Gan Heterostructures Schottky Barrier Diode(SBD) Normally-Off Dry Etching Low-Rate Recess Depth Etching Conditions Algan/Gan-On-Si Leakage Current 5 Nm Semiconductor Device Cvd Diamond Thermal Properties Gan-Based Thermal Behavior Silicon Substrate Sapphire Substrates Breakdown Voltage(BDV) Channel Width Current Collapse Electrical Characteristics Efficiency And Power Gate Recess Specific Contact Resistance Structural Changes Stop Layer Blocking Voltage Enhancement-Mode Low Turn-On Voltage Multi-Step On-Current Smooth Morphology C-Plane Sapphire Substrate Etch-Stop Gan Surface High Voltage 40 Nm Turn-On Threshold Voltage Ohmic Contact Resistance Power Density Rapid Thermal Annealing(RTA) Annealing Temperature Fine Control Forward Current Recessed Gate Different Temperatures Annealing Process Etching Rate High-Power Applications High Temperature Characterization Inductively-Coupled Plasma(ICP) Thickness Variation Trade-Off 900 V Off-State Leakage Power Semiconductor Recent Progress Surface Morphology Gan Nanowire Diamond Substrate Forward And Reverse Temperature Profile Low Damage Metal Layer Metal Stacking Rf Power Sensor Device 20 Nm Etch Rates Gan-On-Diamond Gan Device Gas Sensors High Efficiency Pfc Converter Power Transistor Composite Metal Chemical Vapor Deposition Diamond Heat Spreader High Power Conversion Efficiency Multi-Layer Metal Various Conditions