Subject

Subjects : Minimum noise figure

  • Articles (7)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2017 Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing   Hyung Sup Yoon  Journal of the Korean Physical Society, v.71, no.6, pp.360-364 2 원문
Journal 2016 A V-Band Current-Reused LNA With a Double-Transformer-Coupling Technique   Kong Sunwoo  IEEE Microwave and Wireless Components Letters, v.26, no.11, pp.942-944 30 원문
Journal 2016 Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate   Hyung Sup Yoon  IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 29 원문
Conference 2014 Compact 10 ~ 13 GHz GaN Low Noise Amplifier MMIC using Simple Matching and Bias Circuits   Woojin Chang  European Microwave Integrated Circuits Conference (EuMIC) 2014, pp.516-519 11 원문
Journal 2006 Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors   Shim Jae Yeob  Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 2 원문
Journal 2005 DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs   Shim Jae Yeob  ETRI Journal, v.27, no.6, pp.685-690 5 원문
Conference 2002 RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition   Bongki Mheen  International Microwave Symposium (IMS) 2002, pp.413-416 3 원문
특허 검색결과
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연구보고서 검색결과
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