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Journal
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2025 |
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4 |
0 |
원문
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Journal
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2020 |
A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126 |
4 |
원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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|
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Conference
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2019 |
Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2019, pp.618-619 |
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Journal
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2014 |
Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
Park Young Rak Electronics Letters, v.50, no.16, pp.1164-1165 |
18 |
원문
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Journal
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2012 |
Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 |
1 |
원문
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Journal
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2007 |
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892 |
4 |
원문
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