Subjects :
degradation mechanism
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13 |
2 |
원문
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Journal
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2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161 |
16 |
원문
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Journal
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2015 |
Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
박준용 Scientific Reports, v.5, pp.1-5 |
35 |
원문
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Conference
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2014 |
Thermal Degradation Mechanism of CuInSe2 Solar Cells with Sputtered-Zn(O,S) Buffer Layer
Wi Jae-Hyung European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2014, pp.1-2 |
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Journal
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2008 |
Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor
전재홍 Journal of the Korean Physical Society, v.53, no.1, pp.412-415 |
8 |
원문
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Conference
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2008 |
P‐22: Electrical Stability of ZnO TFT during Gate‐Bias Stress
김태현 Society for Information Display (SID) International Symposium 2008, pp.1250-1253 |
1 |
원문
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Conference
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2005 |
Capacitance Characteristics of Encapsulated Organic Semiconducting Devices
Yong Suk Yang SPIE Optics + Photonics 2005, pp.1-7 |
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Journal
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2005 |
Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers
한성주 IEEE Transactions on Device and Materials Reliability, v.5, no.2, pp.262-267 |
6 |
원문
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Journal
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2002 |
Reliability of planar InP-InGaAs avalanche photodiodes with recess etching
Jihoun Jung IEEE Photonics Technology Letters, v.14, no.8, pp.1160-1162 |
16 |
원문
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