Subjects :
current on-off ratio
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
|
Journal
|
2016 |
InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate
Na Bock Soon Journal of Nanoscience and Nanotechnology, v.16, no.10, pp.10280-10283 |
7 |
원문
|
|
Journal
|
2016 |
Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate
Soon-Won Jung Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.20, pp.4485-4490 |
29 |
원문
|
|
Journal
|
2011 |
n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target
Cheong Woo-Seok Journal of the Korean Physical Society, v.58, no.3, pp.608-611 |
3 |
원문
|
|
Journal
|
2009 |
Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.5, pp.1879-1884 |
9 |
원문
|
|
Journal
|
2009 |
High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators
Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.1-15 |
16 |
원문
|
|
Journal
|
2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477 |
1 |
원문
|
|
Journal
|
2003 |
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209 |
16 |
원문
|
특허 검색결과
| Status |
Year |
Patent Name |
Country |
Family Pat. |
KIPRIS |
|
No search results. |
연구보고서 검색결과
| Type |
Year |
Research Project |
Primary Investigator |
Download |
|
No search results. |