Subject

Subjects : Dislocation density

  • Articles (7)
  • Patents (1)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2022 Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si   Ho Sung Kim  Nanoscale Research Letters, v.17, pp.1-7 4 원문
Journal 2021 GaAs on Si substrate with dislocation filter layers for wafer‐scale integration   Ho Sung Kim  ETRI Journal, v.43, no.5, pp.909-915 3 원문
Journal 2021 Monolithic Growth of GaAs Laser Diodes on Si(001) by Optimal AlAs Nucleation with Thermal Cycle Annealing   Young-Ho Ko  Optical Materials Express, v.11, no.3, pp.943-951 9 원문
Conference 2017 Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate   Sungjae Chang  International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 4 원문
Journal 2016 Wafer-scale Crack-free AlGaN on GaN through Two-step Selective-area Growth for Optically Pumped Stimulated Emission   Young-Ho Ko  Journal of Crystal Growth, v.445, pp.78-83 5 원문
Conference 2016 A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT   Jung Hyunwook  한국 반도체 학술 대회 (KCS) 2016, pp.1-1
Journal 2005 Strain Relaxed SiGe Buffer Prepared by Means of Thermally Driven Relaxation and CMP   Kim Sang Hoon  Electrochemical and Solid-State Letters, v.8, no.11, pp.G304-G306 5 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2009 GROWTH OF GERMANIUM EPITAXIAL THIN FILM WITH NEGATIVE PHOTOCONDUCTANCE CHARACTERISTICS AND PHOTODIODE USING THE SAME UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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