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Journal
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2009 |
Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials
Ryu Hojun ETRI Journal, v.31, no.6, pp.703-708 |
3 |
원문
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Journal
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2009 |
Low Voltage CMOS LC VCO with Switched Self-Biasing
Min Byung Hun ETRI Journal, v.31, no.6, pp.755-764 |
7 |
원문
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Journal
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2009 |
Uncooled Amorphous Silicon 16×16 Infrared Focal Plane Arrays Development
Cheon Sang Hoon 센서학회지, v.18, no.4, pp.301-306 |
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원문
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Journal
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2009 |
Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors
이정민 IEEE Electron Device Letters, v.30, no.5, pp.505-507 |
64 |
원문
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Conference
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2008 |
Sputtered Silicon Antimony Thin Film for The Infrared Detection Layer of Microbolometer
Ryu Hojun SENSORS 2008, pp.301-304 |
0 |
원문
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Conference
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2008 |
1/f Noise Characteristics of Sputtered Silicon Antimony Thin Film for Microbolometer
Ryu Hojun Eurosensors 2008, pp.877-880 |
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Journal
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2006 |
Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
Bongki Mheen Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947 |
0 |
원문
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Journal
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2005 |
Strained-SiGe Complementary MOSFETs Adopting Different Thickness of Silicon Cap Layers for Low Power and High Performance Applications
Bongki Mheen ETRI Journal, v.27, no.4, pp.439-445 |
8 |
원문
|
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Journal
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2003 |
Transport and noise properties of ramp-edge junction
D.H. Kim IEEE Transactions on Applied Superconductivity, v.13, no.2, pp.3738-3741 |
0 |
원문
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Journal
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2003 |
1/f noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under Fowler-Nordheim stress
Young Joo Song IEEE Transactions on Electron Devices, v.50, no.4, pp.1152-1156 |
12 |
원문
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