Subjects : Oxide-semiconductor field-effect transistors

논문 검색결과
Type	Year	Title	Cited
Journal	2021	Issues on Monolithic 3D Integration Techniques for Realizing Next Generation Intelligent Devices Jaehyun Moon 전자통신동향분석, v.36, no.3, pp.12-22
Conference	2020	1700 V Full-SiC Half-bridge Power Module with Low Switching Loss Jung Dong Yun Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-4	1
Journal	2019	2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082	122
Journal	2011	High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4	1
Journal	2009	Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique 문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624	6
Journal	2008	20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3	11
Journal	2006	Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732	32

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