Subjects : Schottky contacts

Articles (9)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited	Download
Journal	2024	β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5	4
Journal	2017	Control of PN-Junction Turn-on Voltage in 4H-SiC merged PiN Schottky Diode Junbo Park Applied Physics Letters, v.110, no.14, pp.1-5	7
Journal	2017	High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161	16
Journal	2014	Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450	3
Conference	2014	Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Conference	2013	Analysis of Forward Characteristics in AlGan/GaN SBD with Schottky Contact Lying on Mesa Edge Park Young Rak International Conference on Solid State Devices and Materials (SSDM) 2013, pp.144-145
Journal	2010	Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150	88
Conference	2006	New Analysis on the Interface Trap States at Schottky Contact Jun Myung Sim International Conference on the Physics of Semiconductors (ICPS) 2006, pp.1-2
Journal	2003	Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137	8

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