Subjects :
Annealing effects
논문 검색결과
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Journal
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2018 |
Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors
Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521 |
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원문
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Journal
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2017 |
Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors
Kang Chan-Mo Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3293-3297 |
3 |
원문
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Conference
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2015 |
Pre-annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors
Kang Chan-Mo International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1 |
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Journal
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2014 |
Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices
Servin Rathi ACS Applied Materials & Interfaces, v.6, no.22, pp.19718-19725 |
21 |
원문
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Journal
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2014 |
Post-Annealing Effect on the Reactively Sputter-Grown CIGS Thin Films and its Influence to Solar Cell Performance
김제하 Current Applied Physics, v.14, no.Supplement 1, pp.S63-S68 |
21 |
원문
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Conference
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2012 |
The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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Journal
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2011 |
Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs
Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4 |
0 |
원문
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Journal
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2010 |
Effect of High Temperature Post-Annealing of La0.7Sr0.3MnO3 Films Deposited by Radio Frequency Magnetron Sputtering on SiO2/Si Substrates Heated at Low Temperature
최선규 Thin Solid Films, v.518, no.15, pp.4432-4436 |
3 |
원문
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Journal
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2007 |
Thermal Annealing Effects on the Electrical Characteristics of the Back Interface in Nano-silicon-on-insulator Channel
조원주 Applied Physics Letters, v.90, no.14, pp.1-3 |
9 |
원문
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Journal
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2006 |
N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 |
28 |
원문
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