ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Algan/Gan Heterostructure Normally-Off Gate Recess T-Shaped Gate Maximum Oscillation Frequency Device Performance Breakdown Voltage(BDV) Power Amplifiers(PAs) Recessed Gate 5 Nm Gate Dielectric Schottky Barrier Diode(SBD) Schottky Barriers(SBs) Gate Length Field Plate Sic Substrate T-Gate Electrical Properties(I-V curve) X-Band Gan Heterostructures Dielectric Layer Electrical Characterization Pseudomorphic High Electron Mobility Transistor(pHEMT) Radiation Hardness Carrier Mobility Sapphire Substrates Metal-Insulator-Semiconductor(MIS) 30 Ghz Enhancement-Mode Two-Step Passivation Layer Dc Characteristics Etching Conditions Compound Semiconductor Surface Treatments Next-Generation High Performance 6 Ghz Rf Characteristics S-Band Depletion Mode Channel Thickness Silicon Carbide(3C-SiC) Proton Radiation Inductively-Coupled Plasma(ICP) Gan Hemt Devices Off-State Leakage Power Semiconductor And Gate Via-Hole Power Characteristics Device Characteristics Device Properties Frequency Range Microwave Integrated Circuit Algaas/Ingaas/Gaas Phemts Comparative Study Mechanical Stress Nitride Layer Power Losses Gate Insulator Silicon Nitride 3 V Drain Voltage Two-Dimensional Electron Gas(2DEG) Center Frequency Gas Mixture Hexagonal Boron Nitride(h-BN) 9.5 GHZ Minimum Noise Figure Self-Heating Effect(SHE) Microwave Characteristics High Gain Stray Inductance Device Degradation Components Technology Gate Width Gate Bias Stress Diode Ideality Factor Low-Rate Saturation Current 10 Ghz Gate Leakage Current Back Barrier Power Inductor Microstrip Coupled Line Fabrication Process Multilayer Circuit Gan Hemt Technology Transconductance (Gm) Bi-Layer Ka-Band E-Beam Lithography Dc-Dc Converters Schottky Diode Microwave Monolithic Integrated Circuits(MMIC) Gan-On-Sic Hemt Millimeter-Wave Wireless(MMW) Wireless System Gate Resistance Total Ionizing Dose Effects Electrical Characteristics Fiber Optic Power Amplifier Mmic Recess Depth Sic Sbd Tensile Stress High Reliability Input Voltage State Performance Parallel Feedback Thin Film Resistor Hetero-Interface Temperature Dependence Sic Device Parasitic Effects Antenna Gain Turn-Off Class B Low Voltage Insulating Layer Proton Irradiation Maximum Frequency Dielectric Resonator Antenna(DRA) Access Region Current Collapse Dc Output Contact Region Return Loss(RL) Wet Chemical Etching Switching Characteristics Wireless Local Area Networks(WLANs) Aperture Coupled Semiconductor Package On/Off Current Ratio Reliability Test Electromagnetic Interference Carrier Concentration Rf Power Dbc Substrate 220 Ghz Equivalent Circuit Model(ECM) Electron Trapping Reverse Recovery Charge Input And Output Filtering Function Icp Etching Compressive Stress Circuit Board Thermal Properties Narrow-Band Filtering Head Size Gate Voltage Etch Rates Current Status Power Performance Output Characteristics Power Factor Correction Converter Linear Extrapolation Wet Etching Double-Deck Theoretical And Experimental Analysis Load-Pull Schottky Contacts Low Current Electrical Resistance Recess Gate Low Noise Amplifier(LNA) Channel Layer Radar System Performance Analysis 20 Nm Performance Degradation Mobile Handset Silicon Substrate Mm-Wave Applications Wireless Personal Area Network(WPAN) Maximum Output Power Metamorphic High Electron Mobility Transistor(mHEMT) 18 Ghz Iii-Nitrides Thermal Behavior Atomic Force Microscope(AFM) Charge Trapping Radar Applications Power Factor Correction (Pfc) Converter Mobility Behavior Stress Measurement Gain Flatness Dynamic Characteristics Pull Test Oxygen Plasma Treatment Transmission Electron Microscopy(TEM) Matching Network Parasitic Capacitance Power Gain Power Added Efficiency(PAE) High Voltage Power Hemt Unconditional Stability Etch Depth Gate Shape Commercial Products Noise Level Mmic Power Amplifier 55 Ghz 700 V Threshold Voltage Shift Transfer Characteristics Wire Bonding Power Conversion System Metal Contact Algan/Gan Mis-Hemt 5g Mobile Co-Fired Ceramics Small Signal Gain Channel Mobility High-Power Applications High Temperature Storage Network Applications Trapped Charge Tetramethylammonium Hydroxide Pre-Passivation Plate Structure Metal Deposition Ceramic Technology Subthreshold Slope(SS) Passivation Thickness Load Conditions Gan Surface Atomic Composition 40 Nm Rapid Thermal Annealing(RTA) Noise Characteristics High Output Power Nanometer-Scale Critical Defects True-Time Delay Millimetre-Wave Measurement Results Transport Characteristics Atomically Thin Level Shifter Bond Wire Practical Implementation Hole Trapping Ohmic Contact Resistance Hot Electrons Ground Planes(GP) Metal-Semiconductor Interface Load Change Turn-On Threshold Voltage Heterostructure Field Effect Transistors Temperature And Pressure Rated Power Shunt Feedback On-Chip Gan Films Line Type 2d Material MOS-HEMT Resistive Component Radiation-Induced Contact Interface Low Temperature Co-Fired Ceramic (Ltcc) Substrate O 3 Growth Pressure 70 Ghz Microelectronic Devices Solid State Power Amplifier Hysteresis Phenomenon Load Regulation I-V Characteristic(Transport property) Temperature Humidity Bias(THB) Diode Characteristics Heat Dissipation Etch-Stop Input Power Degradation Mechanism C-Plane Sapphire Substrate Low Leakage Current Mobility Extraction Method Etch Selectivity Atomic Layer Epitaxy Capacitive Coupling System In Package(SIP) Data Transfer Coulomb Scattering Parasitic Components Etching Method Vt Shift Rf Isolation Surface Layer Gate Coupling Control Gate High Figure Of Merit Treatment Process Voltage Performance Trapping Effects Transistor Characteristics High Rate Property Improvement On-Resistance Carrier Transport Noise Performance Time Exponent Fine Control Radio Frequency (Rf) Performance Optimum Thickness Gate Operation Contact Reliability Electrical Measurements Device Modeling Organic Vapor Index Terms Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Patch Resonator Temperature Range Lattice Temperature Quality-Factor(Q-factor) Surface Wave Full-Load Forward Current Bias Circuit Lead Free Solder Alloy Different Temperatures Channel Temperature Degradation Rate Etch Profile X-Ray Photoelectron Spectroscopy (Xps) Channel Quality Capping Layer Gaas Mmic Chemical Deposition Parallel-Plate Initialization Vector(IV) Accurate Model Epitaxial Wafer Junction Temperature Semiconductor Heterostructure Pin Diode Ceramic Substrate Gan Epilayer Wide Beamwidth Dislocation Density Dc Measurements Stage Structure Coupling Effects Transmission Line Model Bandwidth Enhancement Gas Channel Buffer Structure Open Stub Lumped Elements Gas Reduction Gate Foot Process Technique Drain Electrode Gan Power Device Cost-Effective Radio Frequency Applications Cross Regulation Quality Improvement Dynamic Load Electron Confinement Rf Properties Etching Technique 2-D Electron Gas Etching Process Diode Parameters High Temperature Characterization Thermal Stability(TGA) Sic Mosfet Applied Physics Layer Composition Thickness Variation Microstrip Line Top Electrode Capacitor Model 1200 V Subthreshold Swing(SS) High Stability Anode And Cathode Energy Barrier Insertion Loss Atomic Force Microscopy (Afm) Direct Bonded Copper(DBC) Cleaning Process Scanning Electron Microscopy(S.E.M.) Measurement Data Output Stability State-Of-The-Art Continuous Wave(CW) Edge-Type Simplified Circuit Model Etching Rate Double-Gate(DG) High Current Electric Bike Cross-Sectional Area(CSA) Two-Dimensional Materials Gold Plating Surface Morphology Lattice Constants Low Damage Floating Gate Quaternary Alloy High-Density Bottom Plate Clip Bonding Amplifier Design Energy Levels Mobile Devices Wet And Dry Etching Wafer-Scale Pulsed Mode Gate Control Temperature Profile Direct Contact Van Der Waals Heterostructure Lattice Matched Loss Characteristics Average Efficiency Current-Voltage Measurements Gallium Nitride (Gan) Cvd Diamond Static And Dynamic Performances Stable Structure Contact Area Metal Stacking Carrier Transfer Single-Layer Electronics And Optoelectronics Mobility Degradation Ohmic Metal Fin Width Fabrication Technology Active Region Dual Output Atomic Layer Deposition Method Thermal Cycling Metal Layer Surface Mount Device Antenna Structure Trap Sites Theoretical Calculation Surface Treatment Method Saturation Drain Current Storage Life Structure Analysis Multilayer Inductor Dot Pattern Switching Loss Plasma Process Barrier Layers Gan Power Amplifier I-V Measurement Interface Quality Mis Structure Bonding Structure Central Region As 2 Selective Area Oxide-Semiconductor Field-Effect Transistors Output Ripple Van Der Waals Interaction Width Effects Interface Trap Multi-Layer Substrate Sin Passivation 5g Wireless Communication Alumium Gallium Nitride Yield Enhancement Device Applications Gan Device Charging Time Low Sheet Resistance Large-Scale Growth Temperature Failure Analysis(FA) Operating Frequency X-Ray Diffraction (Xrd) Fluorine Ions Design And Implementation F Max Lossy Transmission Line Aluminum Wires Sin X Carbon-Doped Systematic Study Ltcc Technology 5g System Power Limiter Cascode Mixer Radiation Effects Line Regulation Key Device Gan-On-Diamond Half-Bridge Power Module Gan Capping Thick Copper Digital Circuit Scattering Parameters(S-parameters) Native Oxide Layer Al O 2 3 Reflection Loss Broad Bandwidth Optimum Length Metal Interface Energy Dispersive X-Ray Spectroscopy(EDX) Radio Over Fiber(ROF) 94 Ghz Operation Test Reverse Voltage Composite Metal Multi-Layer Metal Spectroscopic Analyses Surface Defects Physical Model Various Conditions Matching Circuit Insertion Layer Degradation Factor Surface Characteristics Wideband Operation Direct Current Resistance(DCR) Frequency Variation Low Parasitic Inductance Digital Etch Applied Bias Reference Device Conduction Loss Switching Frequency Inter-Stage Epitaxial Layer Inp Hemt Ac Stress High-Efficiency Operation Main Patch Down-Conversion Single-Gate(SG) Process Technology Power Signal Operating Parameters Thermal Performance Fin-Gate Plasma Damage Snap-Back Dc Current Conversion Gain Current Density Capacitance-Voltage Millimeter-Wave Band Different Modes Contact Degradation Direct Current Characteristics Stress Effects Double Plasma Form Factor C-Doped Rf Receiver Via Etch 60ghz Communication Stop Layer Si-Based Deterioration Mechanism Circuit Complexity Output Power Density Three-Terminal Low Annealing Temperature Efficiency Improvement Reactive Ion Etching(RIE) Two-Dimensional Simulation Cu Film Specific Contact Resistance Device Reliability Double-Pulse Small Size Semiconductor Packaging Channel Properties Power Converter 5g Network Laser Lift-Off Metal Pattern Metal Diffusion Input Reflection Coefficient Stress Conditions Noise Mitigation Mobile System Atomic Force Microcopy Power Electronics Oxide Traps 77 Ghz High Power Devices Patch Antenna Pulsed Power Thermal Conductivity Dynamic Test Pulse Power Stress Engineering Switching Device Common-Source Lateral Dimensions High-Frequency Applications Thz Imaging System Global Standards Frequency Properties Recess Etch Interference Test Actual Operation High Power Density Wireless Communication System 3.5 Ghz High Frequency Band Wide Bandwidth Signal Leakage Device Packaging Antenna Bandwidth Fluoride-Based Plasma Treatment Thermal Effects Charging Effects Metal-Insulator-Metal (Mim) Capacitor Threshold Voltage Modulation Stability Improvement 2.4 Ghz Lithography Process Normally-On Unconditionally Stable CF 4 Blocking Voltage Various Substrates Electrical Engineers Stability Parameter Low Switching Front-Side Dual Gate(DG) Supply Voltage Transfer Rate Substrate Effects Ohmic Behavior Radio Frequency Characteristics Gan Buffer Layer Metalorganic Chemical Vapor Deposition Performance Deterioration Growth Conditions Dual Stack Output Voltage Temperature Effect System Cost Aln Substrate Smooth Morphology Current Gain Cutoff Frequency Carrier Distribution Crystalline Quality Tmah Solution Storage Test Inductance Extraction Trans-Impedance Amplifier(TIA) Xrd Data Pulse Generator High-Temperature Operation Tmah Etching Low Loss Transistor Devices Current-Voltage Characteristics Nicr Thin Film 28 Ghz Improved Performance Dangling Bonds Defect-Free Air-Bridge Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Performance And Reliability