ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Heterojunction Bipolar Transistors(HBTs) 94 Ghz Components Technology Power Amplifiers(PAs) Compound Semiconductor Sige Bicmos Cut-Off Frequency T-Shaped Gate Maximum Oscillation Frequency Breakdown Voltage(BDV) Via-Hole Microwave Monolithic Integrated Circuits(MMIC) Fabrication Process Metal-Insulator-Semiconductor(MIS) Device Performance Microwave Integrated Circuit Gate Length Gate Recess Silicon Nitride Inp Hbt Enhancement-Mode Two-Step Threshold Voltage Shift 6 Ghz Inductively-Coupled Plasma(ICP) Gan Hemt Devices 5 Nm Gate Dielectric Self-Aligned Field Plate Sic Substrate Gate Insulator W-Band 40 Gb/S Dry Etching Next-Generation Diode Ideality Factor Mmic Power Amplifier Rf Characteristics Small Signal Gain 10 Ghz National Defense Smart Lighting Dc Characteristics Transconductance (Gm) Platform Development Normally-Off T-Gate Frequency Range Light Sources Transimpedance Amplifier(TIA) Schottky Diode Gan-On-Sic Hemt Gate Resistance Nitride Layer Inp/Ingaas Heterojunction Carrier Mobility Proton Irradiation Gas Mixture Radiation Hardness Drain Voltage 30 Ghz Learning-Based X-Band Applications Double Heterojunction Bipolar Transistor(DHBT) Optical Link Dc Output Dielectric Layer Contact Region 3 V Front-Side 9.5 GHZ Minimum Noise Figure Wet Chemical Etching Electrical Properties(I-V curve) Stress Measurement Oxygen Plasma Treatment 70 Ghz Transmission System Power Gain Power Added Efficiency(PAE) Bonding Process Etch Depth Gaas Heterojunction Bipolar Transistor Noise Level Epitaxial Layers Recessed Gate Wire Bonding Metal Contact 5g Mobile S-Band Depletion Mode Proton Radiation Ingap/Gaas Heterojunction Gan Nanowire Gan Hemt Technology Equivalent Circuit Model(ECM) Etching Conditions Sensor Node Icp Etching Sensor Device Head Size Gas Sensors Output Characteristics Ka-Band Device Properties Radar System Performance Degradation Broadband Amplifier Mobile Handset Matching Circuit Maximum Output Power 60 Ghz Metamorphic High Electron Mobility Transistor(mHEMT) Gate Capacitance Radar Applications Total Ionizing Dose Effects Optical Transmission Thin Film Resistor High Output Power Oscillator Circuit Laser-Assisted Linear Energy Transfer True-Time Delay De-Multiplexer Measurement Results Wafer Level Package Bond Wire Negative Resistance High Gain Mobility Behavior Geometric Characteristics Post Amplifier(PA) Heterostructure Field Effect Transistors Device Degradation Voltage Swing Gain Flatness Ball Bonding Semiconductor Technology Frequency Tuning Range Bifet Technology Power Levels Millimeter Wave(mmWave) Design And Fabrication O 3 Satellite Communication System Solid State Power Amplifier Hysteresis Phenomenon Degradation Mechanism Thermal Experiment Capacitive Coupling Data Transfer Parasitic Components Power Hemt Molecular Beam Epitaxy(MBE) Control Gate Treatment Process Ingap/Gaas Hbt Error Vector Magnitude Design Technology High-Dimensional Digitally Controlled Loop Profile Reflection Coefficient Radio Frequency (Rf) Performance Asynchronous Processor Two-Stage Gate Width Oscillating Frequency Gate Bias Stress Device Modeling Plasma-Enhanced Chemical Vapor Deposition(PECVD) Silicon Heterojunction Gold Wire Tuning Diode High Performance Learning Model Radiation Resistance Etch Profile Algan/Gan Mis-Hemt Nitride Passivation Gaas Mmic Parallel-Plate Driver Amplifier Semiconductor Heterostructure High Signal Gate Leakage Current Wire Length Lumped Elements Gas Reduction Network Applications Verify The Accuracy Flip-Chip Bonding Trapped Charge Gate Foot Process Technique Drain Electrode Off-State Etching Technique Etching Process Finite Element Simulation Data Preparation Microstrip Line Top Electrode Thermal Stress Passivation Layer Subthreshold Slope(SS) Mesa Structure Continuous Wave(CW) Simplified Circuit Model Floating Gate Wireless Local Area Networks(WLANs) Last Stage Parametric Study Mobile Devices Ultralow Power(ULP) Regression Tree And Gate Rf Power Fine Pitch Bump Current-Voltage Measurements 39 Ghz Process Parameters Electron Trapping Input And Output Active Region Atomic Layer Deposition Method Compressive Stress Saturation Drain Current Gaas Process Plasma Process Gan Power Amplifier I-V Measurement Technical Development Ann Model Selective Area Gate Voltage Etch Rates Current Status Power Characteristics Sin Passivation 5g Wireless Communication Double-Deck Charging Time Operating Frequency Capacitor Array Fluorine Ions F Max Radiation Tolerance Recess Gate Lossy Transmission Line Carbon-Doped Low Noise Amplifier(LNA) Device Characteristics Channel Layer Material Properties Optical Communication Systems 5g System Radiation Effects Integration Density Complementary Metal-Oxide-Semiconductor(CMOS) Digital Circuit Passivation Film 20 Nm Computing Time Metal Interface Machine Learning (Ml) Limiting Amplifier Bicmos Technology Key Design Fmcw Radar Physical Model Insertion Layer Surface Characteristics Microwave Applications Wideband Operation Thermal Boundary Conditions Load Impedance Frequency Characteristics Digital Etch Ieee 802.11g Reference Device 18 Ghz Web Application Mechanical Stress Power Signal Large Data Sets Eye Opening Plasma Damage Dc Current Current Density Direct Current(DC) Input Matching Double Plasma Sige Hbt On-Wafer Si-Based Thermo-Mechanical Reliability Low Phase Noise Structural Parameters Tensile Stress Fast And Accurate Electrical Characteristics State Performance Deterioration Mechanism Circuit Complexity Output Power Density Hetero-Interface Inp Dhbt Temperature Dependence Fiber Optic Sic Device Reactive Ion Etching(RIE) Power Amplifier Mmic Molding Process Thermomechanical Analysis 5g Network Output Matching Network Signal Transmission Monte Carlo Method(MCNP) Mobile System Mmic Packaging High Power Devices Pulsed Power Artificial Neural Network (Ann) Displacement Damage Short Distance Silicon-Germanium(SiGe) Global Standards Frequency Properties Wireless Communication System 3.5 Ghz High Frequency Band Wide Bandwidth Fluoride-Based Plasma Treatment Charging Effects Metal-Insulator-Metal (Mim) Capacitor 2.4 Ghz Intelligent Vehicle Normally-On CF 4 Packaging Design Dual Gate(DG) Loop Formation Transfer Rate Linearity Improvement Technique Fully Integrated Performance Deterioration Thermoelectric Device Output Voltage System Cost Return Loss(RL) Supervised Learning Two-Dimensional Electron Gas(2DEG) Design Parameters Transistor Devices Current-Voltage Characteristics Microwave Characteristics Nicr Thin Film 28 Ghz Surface Treatments Air-Bridge Single-Chip