ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Device Performance Power Amplifiers(PAs) Components Technology Compound Semiconductor Maximum Oscillation Frequency Gate Length T-Shaped Gate Via-Hole T-Gate Gate Recess Sic Substrate X-Band Electrical Properties(I-V curve) Recessed Gate Electrical Characterization Carrier Mobility Metal-Insulator-Semiconductor(MIS) Normally-Off Breakdown Voltage(BDV) Field Plate 5 Nm 30 Ghz Pseudomorphic High Electron Mobility Transistor(pHEMT) Radiation Hardness 94 Ghz Sige Bicmos Gate Insulator Silicon Nitride Dielectric Layer Surface Treatments Next-Generation Threshold Voltage Shift High Performance Rf Characteristics Depletion Mode Proton Radiation Inductively-Coupled Plasma(ICP) Gate Dielectric Passivation Layer Fabrication Process Device Characteristics Frequency Range Algaas/Ingaas/Gaas Phemts Comparative Study Nitride Layer Sapphire Substrates 3 V Drain Voltage Enhancement-Mode 9.5 GHZ Minimum Noise Figure Microwave Characteristics Stress Measurement Device Degradation Gate Width Two-Step Gate Bias Stress Diode Ideality Factor Mmic Power Amplifier S-Band Low Temperature Cofired Ceramic(LTCC) Gan Hemt Devices Off-State Microstrip Line National Defense Smart Lighting Dc Characteristics Gan Hemt Technology Etching Conditions Transconductance (Gm) Sensor Node Platform Development Bi-Layer Power Characteristics E-Beam Lithography Light Sources 20 Nm Performance Degradation Schottky Diode Microwave Monolithic Integrated Circuits(MMIC) Optical Communications Gan-On-Sic Hemt Mechanical Stress Sheet Resistance Gate Resistance Algan/Gan Heterostructure Temperature Dependence Power Amplifier Mmic Proton Irradiation Gas Mixture Load-Pull Schottky Contacts Recess Gate Low Noise Amplifier(LNA) Device Properties Radar System Microwave Integrated Circuit Silicon Substrate Mm-Wave Applications Wireless Personal Area Network(WPAN) Maximum Output Power Millimeter-Wave Wireless(MMW) 18 Ghz Epitaxial Layer Thermal Behavior Wireless System Atomic Force Microscope(AFM) Temperature-Dependent Radar Applications Wavelength Shift Total Ionizing Dose Effects Tensile Stress Electrical Characteristics Thin Film Resistor Hetero-Interface Fiber Optic Sic Device Reactive Ion Etching(RIE) Mode Volume Insulating Layer Tm Mode Center Frequency Contact Region Hexagonal Boron Nitride(h-BN) Front-Side Schottky Barrier Diode(SBD) Two-Dimensional Electron Gas(2DEG) Wet Chemical Etching Self-Heating Effect(SHE) Pull Test Oxygen Plasma Treatment Transmission Electron Microscopy(TEM) Degradation Mechanism Matching Network Parasitic Capacitance Power Gain Power Added Efficiency(PAE) Unconditional Stability Etch Depth Gate Shape Noise Level 55 Ghz Transfer Characteristics Saturation Current Metal Contact 6 Ghz Algan/Gan Mis-Hemt Plasma-Induced Damage Gate Leakage Current Network Applications Trapped Charge Tetramethylammonium Hydroxide Pre-Passivation Metal Deposition Microstrip Coupled Line Ceramic Technology Subthreshold Slope(SS) Gan Nanowire And Gate 220 Ghz Equivalent Circuit Model(ECM) Filtering Function Icp Etching Sensor Device Compressive Stress Narrow-Band Filtering Head Size Gate Voltage Gas Sensors Power Performance Linear Extrapolation Double-Deck Gan Surface 40 Nm Rapid Thermal Annealing(RTA) Noise Characteristics High Output Power Nanometer-Scale Critical Defects Linear Energy Transfer Measurement Results Transport Characteristics Atomically Thin Practical Implementation High Gain Mobility Behavior Ohmic Contact Resistance Hot Electrons Metal-Semiconductor Interface Heterostructure Field Effect Transistors Shunt Feedback On-Chip Gan Films Gain Flatness 2d Material Contact Interface O 3 Microelectronic Devices Satellite Communication System Solid State Power Amplifier Hysteresis Phenomenon I-V Characteristic(Transport property) Diode Characteristics C-Plane Sapphire Substrate Resistance Measurement Etch Selectivity Silicon Ring Resonator Capacitive Coupling Data Transfer Coulomb Scattering Parasitic Components Power Hemt Etching Method Vt Shift Rf Isolation Surface Layer Silicon Nanowires(SiNWs) Control Gate Treatment Process High Rate Property Improvement Carrier Transport Noise Performance Time Exponent Radio Frequency (Rf) Performance Asynchronous Processor Gaas Mhemt Contact Reliability Electrical Measurements Temperature Range Silicon Heterojunction Bias Circuit Different Temperatures Radiation Resistance Te Mode Etch Profile X-Ray Photoelectron Spectroscopy (Xps) 5g Mobile Capping Layer Parallel-Plate Initialization Vector(IV) Driver Amplifier Epitaxial Wafer Junction Temperature Semiconductor Heterostructure Small Signal Gain Gan Epilayer Stage Structure Transmission Line Model Open Stub Lumped Elements High Temperature Storage Gas Reduction Gate Foot Process Technique Drain Electrode Gan Power Device Radio Frequency Applications Quality Improvement Rf Properties Etching Technique Etching Process Diode Parameters Silicon Waveguide Thermal Stability(TGA) Applied Physics Thickness Variation Top Electrode Energy Barrier Atomic Force Microscopy (Afm) Cleaning Process Scanning Electron Microscopy(S.E.M.) Plasma Ashing State-Of-The-Art Continuous Wave(CW) Simplified Circuit Model Cross-Sectional Area(CSA) Surface Morphology Floating Gate Quaternary Alloy Wireless Local Area Networks(WLANs) Energy Levels Mobile Devices Wet And Dry Etching Ultralow Power(ULP) Wafer-Scale Pulsed Mode 110 Ghz Temperature Profile Carrier Concentration Rf Power Direct Contact Van Der Waals Heterostructure Current-Voltage Measurements Stable Structure Contact Area Electron Trapping Input And Output Metal Stacking Carrier Transfer Single-Layer Electronics And Optoelectronics Mobility Degradation Ohmic Metal Fabrication Technology Active Region Atomic Layer Deposition Method Polymeric Materials Metal Layer Trap Sites Theoretical Calculation Surface Treatment Method Saturation Drain Current Auger Electron Spectroscopy Dot Pattern Plasma Process Gan Power Amplifier I-V Measurement Interface Quality Technical Development As 2 Selective Area Etch Rates Current Status Van Der Waals Interaction Interface Trap 5.8 Ghz Sin Passivation Wet Etching 5g Wireless Communication Yield Enhancement Charging Time Large-Scale Failure Analysis(FA) Fluorine Ions Design And Implementation F Max Ka-Band Lossy Transmission Line Sin X Channel Layer Systematic Study 5g System Cascode Mixer Radiation Effects Side-Wall Key Device Gan Capping Digital Circuit Scattering Parameters(S-parameters) Native Oxide Layer Reference Surface Metal Interface Energy Dispersive X-Ray Spectroscopy(EDX) Radio Over Fiber(ROF) Mobile Handset Operation Test Composite Metal Multi-Layer Metal Fmcw Radar Spectroscopic Analyses Surface Defects Physical Model Insertion Layer Degradation Factor Surface Characteristics Wideband Operation Digital Etch Reference Device Inp Hemt Ac Stress Microwave Frequencies High Linearity Down-Conversion Iii-Nitrides Process Technology Thermal Performance Plasma Damage Dc Current Conversion Gain Current Density Wlan Applications Capacitance-Voltage Direct Current(DC) Silicon On Insulator(SOI) Contact Degradation Double Plasma Via Etch 60ghz Communication On-Wafer Si-Based High Isolation State Performance Deterioration Mechanism Circuit Complexity Parallel Feedback Output Power Density Three-Terminal Channel Waveguide Low Annealing Temperature Sic Power Devices Power Losses Temperature-Insensitive Cu Film Specific Contact Resistance Device Reliability Off Current 5g Network Laser Lift-Off Experimental Study Metal Diffusion Input Reflection Coefficient Stress Conditions Mobile System Atomic Force Microcopy High Power Devices Maximum Frequency Pulsed Power Thermal Conductivity Single Supply Stress Engineering Displacement Damage Access Region Thz Imaging System Global Standards Frequency Properties Actual Operation High Power Density Wireless Communication System High Frequency Band Fluoride-Based Plasma Treatment Charging Effects Metal-Insulator-Metal (Mim) Capacitor Stability Improvement 2.4 Ghz Lithography Process Normally-On Unconditionally Stable CF 4 Various Substrates Stability Parameter Dual Gate(DG) Transfer Rate Gan Heterostructures Substrate Effects Ohmic Behavior Metalorganic Chemical Vapor Deposition Performance Deterioration Thermoelectric Device System Cost Aln Substrate Current Gain Cutoff Frequency Return Loss(RL) Storage Test High-Temperature Operation Show Through Transistor Devices Current-Voltage Characteristics Nicr Thin Film 28 Ghz Improved Performance Dangling Bonds Defect-Free Air-Bridge Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Anisotropic Etching Single-Chip Performance And Reliability