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Journal
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2006 |
Development and RF Characteristics of Analog 60-GHz Electroabsorption Modulator Module for RF/Optic Conversion
Je Ha Kim
IEEE Transactions on Microwave Theory and Techniques, v.54, no.2, pp.780-786 |
37 |
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Journal
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2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
Moon Gyu Jang
Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 |
32 |
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Journal
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2006 |
Enhanced surface evolution induced by the molecular desorption in dodecanethiol self-assembled monolayer on Au(111)
U.H. Pi
Surface Science, v.600, no.3, pp.625-631 |
4 |
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Journal
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2006 |
Equalization Digital On-Channel Repeater in the Single Frequency Networks
Seung Won Kim
IEEE Transactions on Broadcasting, v.52, no.2, pp.137-146 |
56 |
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Journal
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2006 |
Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
Seung Yun Lee
Solid-State Electronics, v.50, no.3, pp.333-339 |
4 |
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Journal
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2006 |
Effects of Ag/Indium Tin Oxide Contact to a SiC Doping Layer on Performance of Si Nanocrystal Light-Emitting Diodes
Chul Huh
Applied Physics Letters, v.88, no.13, pp.1-3 |
16 |
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Journal
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2006 |
Quantum Simulation of Resonant Tunneling in Nanoscale Tunnel Transistors
Min Cheol Shin Journal of Applied Physics, v.99, no.6, pp.1-3 |
4 |
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Journal
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2006 |
Performance Study of the Minimax Robust Phased Array for Wireless Communications
Vladimir Katkovnik IEEE Transactions on Communications, v.54, no.4, pp.608-613 |
16 |
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Journal
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
Jong Won Lim
Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 |
0 |
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Journal
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2006 |
Formation of a Self-Aligned Hard Mask using Hydrogen Silsesquioxane
Ki Ju Im
Applied Physics Letters, v.88, no.15, pp.1-3 |
3 |
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