Subjects :
ideality factor
논문 검색결과
| Type |
Year |
Title |
Cited |
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Journal
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2024 |
Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode
Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10 |
2 |
원문
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Journal
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2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
25 |
원문
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2017 |
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device
Mohammad Asif Khan ACS Applied Materials & Interfaces, v.9, no.32, pp.26983-26989 |
8 |
원문
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Journal
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2017 |
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
이한솔 ACS Applied Materials & Interfaces, v.9, no.18, pp.15592-15598 |
32 |
원문
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Conference
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2016 |
Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate
Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2 |
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Journal
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2012 |
Analytic Formalism for Current Crowding in Light Emitting Diodes
Lee Kyu-Seok Physica Status Solidi (A), v.209, no.12, pp.2630-2634 |
6 |
원문
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Journal
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2010 |
Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers
V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150 |
88 |
원문
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