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Journal
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2016 |
TiN/PECVD-Si3N4/TiN Diaphragm-based Capacitive-type MEMS Acoustic Sensor
Jaewoo Lee Electronics Letters, v.52, no.6, pp.468-470 |
6 |
원문
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Conference
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2013 |
Improvement of C-Si Surface Passivation using Dual Intrinsic A-Si:H Layers for Silicon Heterojunction Solar Cells
Lee Kyu Sung Photovoltaic Specialists Conference (PVSC) 2013, pp.1254-1256 |
0 |
원문
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Conference
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2012 |
Surface passivation for silicon heterojunction solar cells by hodrogenated amorphous silicon using inductively coupled plasma chemical vapor deposition
연창봉 Global Photovoltaic Conference (GPVC) 2012 |
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Journal
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2011 |
Low-Temperature Synthesis of Thin Graphite Sheets Using Plasma-Assisted Thermal Chemical Vapor Deposition System
Byeong-Joo Lee Materials Letters, v.65, no.7, pp.1127-1130 |
13 |
원문
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Journal
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2010 |
Controlled Synthesis of Monolayer Graphene Toward Transparent Flexible Conductive Film Application
Byeong-Joo Lee Nanoscale Research Letters, v.5, no.11, pp.1768-1773 |
39 |
원문
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Journal
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2010 |
General Route to Single-Crystalline SnO Nanosheets on Arbitrary Substrates
Brijesh Kumar The Journal of Physical Chemistry C, v.114, no.25, pp.11050-11055 |
65 |
원문
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Journal
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2008 |
Catalyst-Free Synthesis of ZnO Nanorods on Metal Substrates by Using Thermal Chemical Vapor Deposition
박승식 Journal of the Korean Physical Society, v.53, no.1, pp.183-187 |
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Journal
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2008 |
Low-temperature Synthesis of One-dimensional ZnO Nanostructures on Screen-printed Carbon Nanotube Films
박승식 Physica E : Low-dimensional Systems and Nanostructures, v.40, no.7, pp.2526-2530 |
12 |
원문
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Journal
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2008 |
ZnO Nanotips and Nanorods on Carbon Nanotube/Si Substrates: Anomalous P-type Like Optical Properties of Undoped ZnO Nanotips
박승식 Nanotechnology, v.19, no.24, pp.1-5 |
16 |
원문
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Journal
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2007 |
Controlled Growth of Two-Dimensional ZnO Nanowalls by Thermal Chemical Vapor Deposition
이삼동 Journal of the Korean Physical Society, v.51, pp.S303-S307 |
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Journal
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2004 |
1.55 [micro sign]m bottom-emitting InAlGaAs VCSELs with Al2O3∕a-Si thin-film pairs as top mirror
Song Hyun Woo Electronics Letters, v.40, no.14, pp.868-869 |
4 |
원문
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Journal
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2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 |
15 |
원문
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