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Conference
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2022 |
Large-Area GaN FET Modeling Using Operating Temperature Distribution Characteristics of Gate Channels
Woojin Chang International Conference on Consumer Electronics (ICCE) 2022 : Asia, pp.684-687 |
0 |
원문
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Conference
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2021 |
Analysis of Temperature Characteristics of Gate Channels by DC Bias Conditions for Large-Size GaN FET Modeling
Woojin Chang International Conference on Consumer Electronics (ICCE) 2021 : Asia, pp.398-392 |
1 |
원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2017 |
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems
Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68 |
16 |
원문
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Conference
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2016 |
Common-Source Inductance Reduction in GaN Cascode FET for High- Speed Switching and High-Efficiency Operation
Woojin Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Journal
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2016 |
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
Woojin Chang ETRI Journal, v.38, no.1, pp.133-140 |
8 |
원문
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Conference
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2015 |
Effects on Breakdown Voltage Characteristics of Various Field Plates in GaN FETs
Woojin Chang International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
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Conference
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2015 |
Effects on Breakdown Voltages of GaN FETs for Field Plate Structures
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.326-329 |
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