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Conference
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2024 |
Evaluation of Wavelength Switching in Distributed Bragg Reflector-Laser Diode
Taehyun Park International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1470-1472 |
0 |
원문
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Journal
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2018 |
Cost-Effective 2 × 2 Silicon Nitride Mach-Zehnder Interferometric (MZI) Thermo-Optic Switch
Jiho Joo IEEE Photonics Technology Letters, v.30, no.8, pp.740-743 |
34 |
원문
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Journal
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2016 |
Optimized ion diffusion depth for maximizing optical contrast of environmentally friendly PEDOT:PSS electrochromic devices
Kim Joo Yeon Optical Materials Express, v.6, no.10, pp.3127-3134 |
9 |
원문
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Conference
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2016 |
Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact
Kim Zin-Sig 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 |
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Journal
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2016 |
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
Woojin Chang ETRI Journal, v.38, no.1, pp.133-140 |
7 |
원문
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Journal
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2016 |
Driving Mechanism of High Speed Electrochromic Devices by Using Patterned Array
Tae-Youb Kim Solar Energy Materials & Solar Cells, v.145, no.1, pp.76-82 |
10 |
원문
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Journal
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2015 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
Mun Jae Kyoung Solid-State Electronics, v.114, pp.121-130 |
2 |
원문
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Conference
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2015 |
700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate
나제호 International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
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Journal
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2012 |
Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device
Seo Giwan Applied Physics Letters, v.100, no.1, pp.1-3 |
57 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Kim Jongyun Nano Letters, v.10, no.11, pp.4381-4386 |
547 |
원문
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Journal
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Hu Young Jeong Nano Letters, v.10, no.11, pp.4381-4386 |
547 |
원문
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Journal
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2008 |
Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures
Yoon Sung Min Microelectronic Engineering, v.85, no.12, pp.2334-2337 |
11 |
원문
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Journal
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2008 |
Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator
Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713 |
140 |
원문
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Journal
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2007 |
Low Power and High Speed Phase-change Memory Devices with Silicon-germanium Heating Layers
Lee Seung-Yun Journal of Vacuum Science and Technology B, v.25, no.4, pp.1244-1248 |
16 |
원문
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Conference
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2007 |
Qualification Model 4x4 Microwave Switch Matrix for the COMS Ka-band Communication Payload
Ju In Kwon International Communications Satellite Systems Conference (ICSSC) 2007, pp.1-8 |
0 |
원문
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Journal
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2007 |
Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5
Yoon Sung Min Japanese Journal of Applied Physics, v.46, no.4, pp.L99-L102 |
18 |
원문
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Conference
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2006 |
High Isolation and High Speed 4x4 Microwave Switch Matrix for the Coms KA-Band Communication Payload
Ju In Kwon Ka and Broadband Communications Conference 2006, pp.1-6 |
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Conference
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2006 |
High Isolation PIN Diode Switch for Satellite Communications System
Ju In Kwon International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2006, pp.1-4 |
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Journal
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2005 |
Suppression of Transient Phenomena in Hybrid Raman/EDF Amplifier
Sun Hyok Chang IEEE Photonics Technology Letters, v.17, no.5, pp.1004-1006 |
18 |
원문
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