Subjects : active species

Articles (9)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited	Download
Journal	2012	Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl 2/Ar Inductively Coupled Plasma 김대희 Japanese Journal of Applied Physics, v.51, no.10, pp.1-5	3
Journal	2012	Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas 장한별 Plasma Chemistry and Plasma Processing, v.32, no.2, pp.333-342	3
Journal	2011	Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas 함용현 Vacuum, v.85, no.11, pp.1021-1025	10
Journal	2010	Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas 김문근 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-6	5
Journal	2009	Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2 O and O2 Inductively Coupled Plasmas: A Comparative Study 권광호 Japanese Journal of Applied Physics, v.48, no.8, pp.1-4	2
Journal	2009	Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma 한용현 Japanese Journal of Applied Physics, v.48, no.8, pp.08HD041-08HD045	8
Journal	2008	Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2/X (X=Ar, He, N2) Inductively Coupled Plasmas Alexander Efremov Journal of the Electrochemical Society, v.155, no.12, pp.D777-D782	72
Journal	2008	Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas 김만수 ETRI Journal, v.30, no.3, pp.383-393	10
Journal	2008	Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3∕He inductively coupled plasma 김만수 Journal of Vacuum Science and Technology A, v.26, no.3, pp.344-351	14

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