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Journal
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2018 |
Interface and bulk properties of Cu(In,Ga)Se 2 solar cell with a cracker-ZnS buffer layer
Lee Woo Jung Current Applied Physics, v.18, no.4, pp.405-410 |
4 |
원문
|
|
Journal
|
2018 |
Ultrafast Photocarrier Dynamics at the p-n Junction in Cu(In,Ga)Se2 Solar Cell with Various Zn(O,S) Buffer Layers Measured by Optical Pump-Terahertz Probe Spectroscopy
Lee Woo Jung ACS Applied Energy Materials, v.1, no.2, pp.522-530 |
20 |
원문
|
|
Journal
|
2018 |
Photo-Conductive Detection of Continuous THz Waves Via Manipulated Ultrafast Process in Nanostructures
Kiwon Moon Applied Physics Letters, v.112, no.3, pp.1-5 |
8 |
원문
|
|
Journal
|
2014 |
Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells
Lee Kyu Sung ECS Solid State Letters, v.3, no.3, pp.P33-P36 |
17 |
원문
|
|
Conference
|
2013 |
Improvement of C-Si Surface Passivation using Dual Intrinsic A-Si:H Layers for Silicon Heterojunction Solar Cells
Lee Kyu Sung Photovoltaic Specialists Conference (PVSC) 2013, pp.1254-1256 |
0 |
원문
|
|
Journal
|
2011 |
25.78-Gb/s Operation of RSOA for Next-Generation Optical Access Networks
조근영 IEEE Photonics Technology Letters, v.23, no.8, pp.495-497 |
77 |
원문
|
|
Journal
|
2009 |
Annealing-induced Modifications of Carrier Dynamics andPlasmon-phonon Coupling in Low-temperature-grown GaAs
김창섭 Journal of the Korean Physical Society, v.55, no.2, pp.630-635 |
1 |
원문
|
|
Journal
|
2008 |
Effects of Post-growth Annealing on the Structure and Electro-optical Properties of Low-temperature Grown GaAs
Youn Doo Hyeb Journal of Applied Physics, v.103, no.12, pp.1-5 |
13 |
원문
|
|
Journal
|
2007 |
Structural Change and Its Electrooptical Effects on Terahertz Radiation with Post-Growth Annealing of Low-Temperature-Grown GaAs
Youn Doo Hyeb Japanese Journal of Applied Physics, v.46, no.10, pp.6514-6518 |
1 |
원문
|
|
Journal
|
2005 |
Dependence of the Carrier Lifetime on the Level Spacing in Semiconductor Quantum Dots
장유동 Journal of the Korean Physical Society, v.47, no.2, pp.328-330 |
|
|
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Journal
|
2005 |
Optical Characteristics of In(Ga)As Quantum Dots on (100) InP Substrate for 1.5 μm Laser Diodes
임정순 Microelectronics Journal, v.36, no.3-6, pp.190-193 |
0 |
원문
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