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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2011 |
Suppression in the Negative Bias Illumination Instability of Zn-Sn-O Transistor Using Oxygen Plasma Treatment
Yang Shinhyuk Applied Physics Letters, v.99, no.10, pp.1-3 |
88 |
원문
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Journal
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2009 |
Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors
Jae Kyeong Jeong Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3 |
60 |
원문
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Conference
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2009 |
Oxide TFT Structure Affecting the Device Performance
Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388 |
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Journal
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2009 |
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
백강준 Solid-State Electronics, v.53, no.11, pp.1165-1168 |
23 |
원문
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Conference
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2008 |
High Speed Flash Memory and 1T-DRAM on Dopant Segregated Schottky Barrier (DSSB) FinFET SONOS Device for Multi-functional SoC Applications
최성진 International Electron Devices Meeting (IEDM) 2008, pp.1-4 |
17 |
원문
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Conference
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2008 |
42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display
Park Sang-Hee Society for Information Display (SID) International Symposium 2008, pp.629-632 |
39 |
원문
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