Subjects :
Gate resistance
논문 검색결과
| Type |
Year |
Title |
Cited |
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Journal
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2025 |
Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs
Jung Hyunwook ETRI Journal, v.권호미정, pp.1-12 |
0 |
원문
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Journal
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2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 |
4 |
원문
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Journal
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2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
29 |
원문
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Journal
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2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686 |
3 |
원문
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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Conference
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2006 |
Fabrication of Low Noise Amplifier using 0.15 um Power Metamorphic HEMT and It’s Noise Characteristics
Shim Jae Yeob 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 |
5 |
원문
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연구보고서 검색결과
| Type |
Year |
Research Project |
Primary Investigator |
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