Subjects :
radiation hardness
논문 검색결과
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Year |
Title |
Cited |
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Journal
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2025 |
Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation
김상엽 Journal of Semiconductors, v.권호미정, pp.1-7 |
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원문
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Journal
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11 |
14 |
원문
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Conference
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2020 |
G03-1728 - Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
Sungjae Chang PRiME 2020, pp.1-3 |
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Conference
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2020 |
Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
Sungjae Chang PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526 |
3 |
원문
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Conference
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2020 |
Unmanned Aerial Vehicle Identification Success Probability with LoRa Communication Approach
Jinhyung Oh International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC) 2020, pp.1-6 |
6 |
원문
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Journal
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2019 |
Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
Sungjae Chang ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248 |
11 |
원문
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Conference
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2019 |
Improvement of Proton Radiation Hardness through Bi-layer Gate Insulating System in GaN-based MIS-HEMTs
Sungjae Chang Internatinoal Conference on Nitride Semiconductors (ICNS) 2019, pp.119-119 |
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Journal
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2018 |
Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric
Maruf A. Bhuiyan IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52 |
26 |
원문
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Conference
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2008 |
Study on Gate Around Transistor(GAT) Layout for Radiation Hardness
이민수 Asia-pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2008, pp.1-6 |
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특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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