Subjects :
oxide thickness
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
|
Journal
|
2017 |
The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors
Chosy Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.26, pp.6521-6526 |
15 |
원문
|
|
Journal
|
2012 |
A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 |
2 |
원문
|
|
Journal
|
2010 |
Effects of N2 and NH3 Remote Plasma Nitridation on the Structural and Electrical Characteristics of the HfO2 Gate Dielectrics
Park Kun Sik Applied Surface Science, v.257, no.4, pp.1347-1350 |
37 |
원문
|
|
Journal
|
2010 |
In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
최철종 Materials Transactions, v.51, no.4, pp.793-798 |
3 |
원문
|
|
Journal
|
2009 |
Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film
최철종 Microelectronics Reliability, v.49, no.4, pp.463-465 |
2 |
원문
|
|
Journal
|
2007 |
Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics
Choi Chel-Jong Electrochemical and Solid-State Letters, v.11, no.2, pp.H22-H25 |
0 |
원문
|
|
Journal
|
2007 |
Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Japanese Journal of Applied Physics, v.46, no.1, pp.125-127 |
8 |
원문
|
|
Journal
|
2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230 |
1 |
원문
|
|
Journal
|
2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 |
32 |
원문
|
|
Journal
|
2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137 |
8 |
원문
|
특허 검색결과
| Status |
Year |
Patent Name |
Country |
Family Pat. |
KIPRIS |
|
No search results. |
연구보고서 검색결과
| Type |
Year |
Research Project |
Primary Investigator |
Download |
|
No search results. |