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Journal
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2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
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Conference
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2024 |
High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications
Kim Donghan Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2 |
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Journal
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2021 |
Theoretical and experimental analysis of a venting clip to reduce stray inductance in high‐power conversion applications
Hyun-Gyu Jang ETRI Journal, v.43, no.6, pp.1103-1112 |
0 |
원문
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Journal
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2019 |
Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization
Park Kun Sik 전력전자학회논문지, v.24, no.6, pp.411-418 |
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원문
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Journal
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2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
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원문
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Conference
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2019 |
GaN Device Technology for High Voltage and RF Power Application
Hyung Seok Lee 한러 과학기술의 날 2019, pp.1-1 |
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Conference
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2017 |
Investigation of GaN Power FETs for High Power Applications
Hyung Seok Lee Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2017, pp.1-2 |
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Conference
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2016 |
GaN HEMT Modeling for X-band Applications
Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 |
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Conference
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2015 |
Simplified Near-Magnetic Field of the Resonators in Wireless Power Transfer
Moon Jung Ick International Symposium on Antennas and Propagation (ISAP) 2015, pp.268-270 |
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Conference
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2015 |
700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate
나제호 International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Conference
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2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
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Conference
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2011 |
Variation of Electrical Properties with Edge Termination in Mesh Type Trench Double Diffused MOSFETs (TDMOS) for High Power Application
Na Kyoung Il 한국진공학회 학술 대회 (동계) 2008, pp.110-110 |
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