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Journal
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2025 |
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Park Honghwi Laser and Photonics Reviews, v.19, no.19, pp.1-9 |
1 |
원문
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Journal
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2024 |
Minimal-gain-printed silicon nanolaser
박병준 SCIENCE ADVANCES, v.10, no.38, pp.1-9 |
2 |
원문
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Journal
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2024 |
Minimal-gain-printed silicon nanolaser
김민우 SCIENCE ADVANCES, v.10, no.38, pp.1-9 |
2 |
원문
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Conference
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2024 |
Highly efficient vertical outgassing channel technique for direct wafer bonding and III-V membrane regrowth
Park Honghwi 한국반도체 학술대회 (KCS) 2024, pp.1-3 |
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Conference
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2022 |
Study of the regrowth III-V layer on III-V/Si bonding template using MOCVD
Yoonsoyeon 한국반도체 학술대회 (KCS) 2022, pp.1-2 |
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Journal
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2020 |
High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing
Young-Ho Ko Solid-State Electronics, v.166, pp.1-5 |
5 |
원문
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Conference
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2019 |
Heterogeneous Integration of III-V Photonic Devices with Silicon: From Laser Diodes to Single Photon Emitters
Young-Ho Ko 한국물리학회 학술 논문 발표회 (가을) 2019, pp.1-1 |
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Conference
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2019 |
Integrated Single Photon Source of InAs Quantum Dot with Silicon-based Photonic Circuits
Young-Ho Ko Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference (CLEO/Europe-EQEC) 2019, pp.1-1 |
0 |
원문
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Journal
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2018 |
Trends in Terahertz Semiconductor based on Electron Devices
Kang Dongwoo 전자통신동향분석, v.33, no.6, pp.34-40 |
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원문
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Journal
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2017 |
Printed Nanolaser on Silicon
이정민 ACS Photonics, v.4, no.9, pp.2117-2123 |
52 |
원문
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Conference
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2016 |
Device Characterization of the VCSEL-on-silicon as an on Chip Light Source
Kwack Myungjoon Silicon Photonics XI (SPIE 9752), v.9752, pp.1-6 |
1 |
원문
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Journal
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2010 |
High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~155 μm
Joo Jiho Optics Express, v.18, no.16, pp.16474-16479 |
42 |
원문
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Conference
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2008 |
The Higher Mode Lasing Scheme of 1.56μm Si-InGaAsP Hybrid Laser Diode
Leem Young Ahn Conference on Lasers and Electro-Optics (CLEO) 2008, pp.1-2 |
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