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Conference
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2020 |
1m Pixel Pitch Spatial Light Modulator Panel for Digital Holography
Hwang Chi-Sun Society for Information Display (SID) International Symposium 2020, pp.297-300 |
13 |
원문
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Journal
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2017 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
Lee Hyun Soo Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362 |
1 |
원문
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Journal
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2016 |
InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity
Ji Hun Choi IEEE Electron Device Letters, v.37, no.10, pp.1295-1298 |
36 |
원문
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Journal
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2015 |
0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
Lee Hyun Soo IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 |
53 |
원문
|
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Journal
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2013 |
Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits
백강준 Organic Electronics, v.14, no.5, pp.1407-1418 |
65 |
원문
|
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Journal
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2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 |
1 |
원문
|
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Journal
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2009 |
Control of channel doping concentration for enhancing the sensitivity of ‘top-down’ fabricated Si nanochannel FET biosensors
Park Chan Woo Nanotechnology, v.20, no.47, pp.1-6 |
14 |
원문
|
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Journal
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2003 |
Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers
Kim Cheon Soo ETRI Journal, v.25, no.3, pp.195-202 |
4 |
원문
|
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Conference
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2001 |
Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz
Kim Cheon Soo International Electron Devices Meeting (IEDM) 2001, pp.887-890 |
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원문
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