16ZB1200, Developement of key material and device technologies for next generation semiconductor devices with extreme performance,
Leem Young Ahn
Abstract
<연구내용 및 범위> - 광빗살발생기 구도 도출 . 펄스레이저 다이오드 기반의 광빗살발생기 도출 . 전산모사를 통한 넓은 optical bandwidth를 가지는 펄스레이저 다이오드 소자구도 도출 . Optical injection locking을 통한 narrow linewidth 레이저 다이오드와 펄스레이저 다이오드로 구성되는 광빗살발생기 제안 - 광빗살발생기 주요공정개발 . 반도체 단위공정개발 . 구도 검증용 펄스레이저 다이오드 제작 - 광빗살발생기 측정셋업 구축 및 구도검증 . 구도 검증용 펄스레이저 다이오드 제작 . 3dB optical bandwidth 확정성 검증: 1.7nm . Optical injection locking에 따른 좁은 선폭구현 가능성 검증 (100MHz → <5MHz) - GaN-Diamond 증착기술개발 . GaN surface polishing 및 SiNx interlayer에 따른 성장기술 검증 . Diamond 증착조건 다변화에 따른 성장기술 검증 . Diamond 박막 표면분석 (AFM, SEM), 물성분석 (Raman, PL분석), 열전도도 분석 수행 - GaN-Diamond 소자공정개발 . Diamond와 GaN의 표면분석 (AFM, SEM)과 XRD로 구조 분석 . 기판 열전도도에 따른 MESA 에칭, Ohmic 등 공정검색 . 5A(@3V)급 GaN-Diamond SBD 제작을 통한 공정검증 - 전산모사기반 p형 산화물반도체 소재조성 검색 . ICSD에 축적된 10,000개의 산화물구조로부터 약 2,000개의 고유 구조를 선별하고, 최종 SnSO4, SnB4O7, AsSbO4등의 우수 후보군 도출 - 박막공정검색 및 성장을 통한 p형 산화물반도체 소재 평가 . 용액 공정법에 의한 신규 고성능 p형 산화물반도체 합성 및 박막소재 평가 (SnO, K-doped SnO) : 홀이동도 150cm2/Vs 달성 . 펄스레이저 증착법에 의한 p형 산화물반도체 박막 및 TFT 제조 특성평가 (Cu2O)
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