고전자 이동도, 집적회로, 전력증폭기, 저잡음 증폭기, 단극-쌍투 스위치, 질화붕소, High Electron Mobility, Integrated Circuit, Power Amplifier, Low Noise Amplifier, Single Pole Double Throw Switch, Hexagonal Boron Nitride
KSP Keywords
GaN semiconductor, radiation hardness, satellite communication
Funding Org.
과학기술정보통신부
Research Org.
한국전자통신연구원
Project Code
24JH1200, Localization technology development of radiation hardness transceiver MMIC using GaN semiconductor for satellite communication ,
Sungjae Chang
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