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Conference
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2020 |
Efficiency Improvement of Power Conversion System with Multilayer Power Inductor
Hyun-Gyu Jang International Conference on Consumer Electronics (ICCE) 2020 : Asia, pp.137-140 |
1 |
원문
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Journal
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2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae Won Do Thin Solid Films, v.628, pp.31-35 |
11 |
원문
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Journal
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2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161 |
16 |
원문
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Conference
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2015 |
Portable Terahertz Scanner for Imaging and Spectroscopy Using InP-Related Devices
Park Kyung Hyun Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII (SPIE 9362), pp.1-11 |
0 |
원문
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Journal
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2013 |
Photovoltaic Performance of Flexible Cu(In,Ga)Se2 Thin-Film Solar Cells with Varying Cr Impurity Barrier Thickness
Cho Daehyung Current Applied Physics, v.13, no.9, pp.2033-2037 |
17 |
원문
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Journal
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2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 |
1 |
원문
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Journal
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2010 |
Analysis of the Current-Voltage Curves of a Cu(In,Ga)Se2 Thin-Film Solar Cell Measured at Different Irradiation Conditions
Lee Kyu-Seok Journal of the Optical Society of Korea, v.14, no.4, pp.321-325 |
9 |
원문
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Conference
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2010 |
Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 |
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Conference
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2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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Journal
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2005 |
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 |
5 |
원문
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Journal
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2004 |
A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC
손원소 ETRI Journal, v.26, no.1, pp.7-12 |
6 |
원문
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